>>>>>型號(hào):5SHX2645L0004 斷路器
【功能描述】
5SHX2645L0004 是斷路器。
5SHX2645L0004 是一款高品質(zhì)斷路器，設(shè)計(jì)用于各種應(yīng)用。它以最高的質(zhì)量和性能標(biāo)準(zhǔn)建造，確保即使在最苛刻的環(huán)境中也能可靠運(yùn)行。
該斷路器的額定電壓為230/400V AC，額定電流為45，分?jǐn)嗄芰?0ka，桿數(shù)為31。
5SHX2645L0004技術(shù)說(shuō)明
5SHX2645L0004的技術(shù)說(shuō)明有：
緩沖層結(jié)構(gòu)。在相同阻斷電壓下，硅片厚度和標(biāo)準(zhǔn)結(jié)構(gòu)更薄，大大降低了導(dǎo)通和開(kāi)關(guān)損耗，提高了器件的效率。
門極換流。借助集成門極電路實(shí)現(xiàn)的”門極換流”和”硬驅(qū)動(dòng)”關(guān)斷過(guò)程。
與二極管組合。將GTO芯片與反并聯(lián)二極管和門極驅(qū)動(dòng)電路集成在一起，再與其門極驅(qū)動(dòng)器在外圍以低電感方式連接，結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點(diǎn)，
在導(dǎo)通階段發(fā)揮晶閘管的性能，關(guān)斷階段呈現(xiàn)晶體管的特性。
5SHX2645L0004的特點(diǎn)有：
具有電流大、阻斷電壓高、開(kāi)關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、低導(dǎo)通損耗等特點(diǎn)。
制造成本低，成品率高，有很好的應(yīng)用前景。
采用緩沖層結(jié)構(gòu)后，在相同阻斷電壓下，硅片厚度和標(biāo)準(zhǔn)結(jié)構(gòu)更薄，大大降低了導(dǎo)通和開(kāi)關(guān)損耗，提高了器件的效率。
IGCT集成門極換流晶閘管是中壓變頻器開(kāi)發(fā)的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體開(kāi)關(guān)器件。
>>>>>型號(hào):5SHX2645L0004 斷路器
【英文介紹】
5SHX2645L0004 is a circuit breaker.
The 5SHX2645L0004 is a high quality circuit breaker designed for use in a variety of applications. It is built to the highest quality and performance standards,
ensuring reliable operation even in the most demanding environments. The circuit breaker has a rated voltage of 230/400V AC, a rated current of 45, a breaking capacity
of 10ka, and a bar number of 31.
5SHX2645L0004 Technical Description
Technical specifications of the 5SHX2645L0004 are:
Buffer layer structure. Under the same blocking voltage, the wafer thickness and standard structure are thinner, which greatly reduces the on-off and switching losses and
improves the efficiency of the device.
Gate commutation. "Gate commutation" and "hard drive" shut-off processes with integrated gate circuits.
Combined with diodes. The GTO chip is integrated with the anti-parallel diode and gate driver circuit, and then connected with the gate driver in a low inductance mode at
the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, the performance of the thyristor is played in
the on-stage, and the characteristics of the transistor are displayed in the off-stage.
5SHX2645L0004 features:
It has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure and low on-loss.
With low manufacturing cost and high yield, it has a good application prospect.
With the buffer layer structure, under the same blocking voltage, the wafer thickness and standard structure are thinner, which greatly reduces the on-off and on-off losses,
and improves the efficiency of the device.
IGCT integrated gate commutator thyristor is a new type of power semiconductor switching device developed by medium voltage inverter for large power electronics.
>>>>>型號(hào):5SHX2645L0004 斷路器
