>>>>>型號:5SHY4045L0001 3BHB018162R0001 集成柵極換流晶閘管

【功能描述】

5SHY4045L0001 3BHB018162R0001集成柵極換流晶閘管

5SHY4045L0001 3BHB018162R0001是將GTO芯片與反并聯(lián)二極管和柵極驅(qū)動電路集成在一起，再與其柵極驅(qū)動器在外圍以低電感方式連接,結(jié)合

了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點(diǎn)，在導(dǎo)通階段發(fā)揮晶閘管的性能，關(guān)斷階段呈現(xiàn)晶體管的特性。

IGCT(Intergrated Gate Commutated Thyristors)是1996年問世的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。IGCT是一 種基于GTO結(jié)構(gòu)、利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動、

采用緩沖層結(jié)構(gòu)及陽極透明發(fā)射極技術(shù)的新型大功

半導(dǎo)體開關(guān)器件，具有晶閘管的通態(tài)特性及晶體管的開關(guān)特性。5SHY4045L0001 3BHB018162R0001由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù),

因而使動態(tài)損耗降低了約50%，另外，此類器件還在一個芯片 上集成了具有良好動態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)

壓降、高阻斷電壓和晶體管穩(wěn)定的開關(guān)特性有機(jī)結(jié)合.

IGCT使變流裝置在功率、可靠性、開關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來了新的飛躍。

>>>>>型號:5SHY4045L0001 3BHB018162R0001 集成柵極換流晶閘管

【英文介紹】

5SHY4045L0001 3BHB018162R0001 Integrated gate converter thyristor 

5SHY4045L0001 3BHB018162R0001 Integrated GTO chip with anti-parallel diode and gate driver 

circuit, and then connected with the gate driver in a low inductance mode at the periphery, combined

Due to the advantages of stable switching ability of transistor and low on-state loss of thyristor, the performance of thyristor is brought into play in on-stage, and the 

characteristics of transistor are presented in off-stage.

IGCT(Intergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in large power electronics packages introduced in 1996. IGCT is a new 

type of power based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology

The semiconductor switching device has the on-state characteristics of a thyristor and the switching characteristics of a transistor. 5SHY4045L0001 3BHB018162R0001 

Due to the buffer structure and shallow emitter technology,

Thus, the dynamic loss is reduced by about 50%. In addition, such devices also integrate a continuous current diode with good dynamic characteristics on a chip, so as 

to achieve the low-pass state of the thyristor in its unique way

The voltage drop, high blocking voltage and stable switching characteristics of the transistor are combined.

IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.

>>>>>型號:5SHY4045L0001 3BHB018162R0001 集成柵極換流晶閘管