6ES7135-0HF01-0XB0 |5SHY5045L0020|模擬電子模塊|

6ES7135-0HF01-0XB0 是模擬電子模塊，用于 ET 200B 分布式 I/O 系統(tǒng)，提供 4 個(gè)模擬輸出通道，可以是電壓或電流輸出。這個(gè)模塊的電壓輸出范圍是 0 到 10V 和 -10V 到 +10V，具有 11 位的分辨率，并且具備短路保護(hù)功能。電流輸出范圍是 0 到 20mA 和 4 到 20mA。該模塊還具備多種其他功能和規(guī)格，適用于多種工業(yè)應(yīng)用場景

PN結(jié)的單向?qū)щ娦?/span>

當(dāng)外加電壓使PN結(jié)中P區(qū)的電位高于N區(qū)的電位，稱為加正向電壓，簡稱正偏;反之稱為加反向電壓，簡稱反偏。

(1)PN結(jié)加正向電壓時(shí):低電阻、大的正向擴(kuò)散電流。

(2)PN結(jié)加反向電壓時(shí):高電阻、很小的反向漂移電流。

當(dāng)PN結(jié)處于正向偏置時(shí)，擴(kuò)散運(yùn)動(dòng)使多數(shù)載流子穿過PN結(jié)，在對(duì)方區(qū)域PN結(jié)附近有高于正常情況時(shí)的電荷累積。存儲(chǔ)電荷量的大小,。

取決于PN結(jié)上所加正向電壓值的大小。離結(jié)越遠(yuǎn)，由于空穴與電子的復(fù)合，濃度將隨之減小。

若外加正向電壓有一增量V，則相應(yīng)的空穴(電子)擴(kuò)散運(yùn)動(dòng)在結(jié)的附近產(chǎn)生一電荷增量^Q，二者之比^Q/^V為擴(kuò)散電容Cd.

6ES7135-0HF01-0XB0 is an analog electronics module for ET 200B distributed I/O systems that provides 4 analog output channels, which can be voltage or current outputs. The module has a voltage output range of 0 to 10V and -10V to +10V, an 11-bit resolution, and short-circuit protection. Current output ranges are 0 to 20mA and 4 to 20mA. The module also has a variety of other features and specifications for a variety of industrial application scenarios

Unidirectional conductivity of PN junction

When the applied voltage makes the potential in the P region of the PN junction higher than the potential in the N region, it is called the positive voltage, referred to as positive bias; On the contrary, it is called adding reverse voltage, referred to as reverse bias.

(1)PN junction with forward voltage: low resistance, large forward diffusion current.

(2)PN junction with reverse voltage: high resistance, small reverse drift current.

When the PN junction is in forward bias, the diffusion motion causes most carriers to pass through the PN junction, and there is higher than normal charge accumulation near the PN junction in the other region. The magnitude of the stored charge,.

It depends on the value of the forward voltage applied to the PN junction. The further away from the junction, the concentration will decrease due to the recombination of holes and electrons.

If the applied forward voltage has an incremental V, then the corresponding hole (electron) diffusion motion produces an incremental charge ^Q near the junction, the ratio of the two ^Q/^V is the diffusion capacitance Cd.